	US 7,510,929 B2
	Method for making memory cell device
Chieh Fang Chen, Panchiao (Taiwan)
Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan)
Filed on Oct. 18, 2006, as Appl. No. 11/550,539.
Prior Publication US 2008/0096375 A1, Apr. 24, 2008
Int. Cl. H01L 21/8244 (2006.01)

U.S. Cl. 438—238 [438/84; 438/102; 438/103; 257/614; 257/E31.008; 257/E21.068; 257/E21.662]

6 Claims

1. A method for making a memory cell device of the type including a memory material element switchable between electrical property states by the application of energy, the method comprising:

depositing a first electrical conductor layer on a substrate;

depositing a first dielectric material layer over the first electrical conductor layer;

depositing a second dielectric material layer over the first dielectric material layer;

forming a first hole through the first and second dielectric material layers and the first electrical conductor layer to create a first electrode strip from the first electrical conductor layer, the first hole bounded by a side wall;

etching a portion of the side wall defined by the first dielectric material layer to create a recessed region between the first electrode strip and the second dielectric material layer;

depositing a third dielectric material into the first hole, the third dielectric material depositing step carried out to create a void at the recessed region, the void opening onto the first electrode strip;

forming a second hole through the third and second dielectric materials and through the first electrode strip to (1) create a first electrode from the first electrode strip, and (2) intersect the void so that the void includes a first void portion not aligned with the second hole and a second void portion aligned with the second hole;

filling the second void portion and at least a portion of the second hole with a fourth dielectric material leaving at least some of the first void portion open;

removing the second dielectric material layer and portions of the third and fourth dielectric materials above the first dielectric material layer to expose the first void portion;

applying a memory material into the first void portion to create a memory material element with the memory material element in contact with the first electrode; and

applying a second electrode conductor layer over the outer surface of the first dielectric material layer and in electrical contact with the memory material element.