| US 7,510,917 B2 | ||
| Active matrix display device and method of manufacturing the same | ||
| Hongyong Zhang, Atsugi (Japan); and Masayuki Sakakura, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Jun. 19, 2007, as Appl. No. 11/812,528. | ||
| Application 11/812528 is a division of application No. 10/861365, filed on Jun. 07, 2004, granted, now 7,235,814. | ||
| Application 10/861365 is a division of application No. 10/139236, filed on May 07, 2002, granted, now 6,784,411. | ||
| Application 10/139236 is a division of application No. 09/908794, filed on Jul. 20, 2001, granted, now 6,399,933. | ||
| Application 09/908794 is a division of application No. 09/590130, filed on Jun. 09, 2000, granted, now 6,274,861. | ||
| Application 09/590130 is a division of application No. 09/104979, filed on Jun. 26, 1998, granted, now 6,087,648. | ||
| Claims priority of application No. 09-191775 (JP), filed on Jul. 01, 1997. | ||
| Prior Publication US 2007/0249084 A1, Oct. 25, 2007 | ||
| Int. Cl. H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—154 [257/E21.413] | 26 Claims |

| 1. A method of manufacturing a semiconductor device comprising:
forming a first active element and a second active element over a substrate;
forming a first insulating layer over the first active element and the second active element;
forming a photoelectric conversion layer over the first insulating layer and the second active element with a lower electrode
between the first insulating layer and the photoelectric conversion layer;
forming a second insulating layer over the first insulating layer and the first active element;
forming a transparent conductive film over the photoelectric conversion layer and the second insulating layer; and
patterning the transparent conductive film into a pixel electrode connected to the first active element and a transparent
electrode provided over the photoelectric conversion layer,
wherein a display is provided with the pixel electrode, and
wherein a sensor is provided with the photoelectric conversion layer and the lower electrode and the transparent electrode.
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