| US 7,510,886 B2 | ||
| Method of manufacturing semiconductor photodetector | ||
| Fumio Takamura, Fujimino (Japan); and Haruo Fukawa, Fujimino (Japan) | ||
| Assigned to New Japan Radio Co., Ltd., Tokyo (Japan) | ||
| Filed on Jul. 06, 2006, as Appl. No. 11/480,927. | ||
| Claims priority of application No. 2005-198649 (JP), filed on Jul. 07, 2005. | ||
| Prior Publication US 2007/0026563 A1, Feb. 01, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—22 [438/25; 257/E31.121] | 2 Claims |
| 1. A method for manufacturing a semiconductor photodetector by sealing at least a light receiving surface side of a semiconductor
light receiving element having high spectral sensitivity in wavelengths from at least a visible light region to infrared region
with a sealing resin, comprising steps of:
preparing a dispersion liquid including boride of one or more elements selected from La, Pr, Nd, Ce, Y, Ti, Zr, Hf, V, Nb,
Ta, Cr, Mo or W, ruthenium oxide or iridium oxide of micro particles whose particle diameter is not more than approximately
100 nm are dispersed therein by a solvent:
preparing said sealing resin by mixing said prepared dispersion liquid with a transparent resin;
sealing said semiconductor light receiving element by said prepared sealing resin; and
removing said solvent in said sealing resin.
|