| US 7,509,962 B2 | ||
| Method and control system for treating a hafnium-based dielectric processing system | ||
| David L. O'Meara, Poughkeepsie, N.Y. (US); and Shingo Maku, Kai (Japan) | ||
| Assigned to Tokyo Electron Limited, Tokyo (Japan) | ||
| Filed on Jan. 21, 2005, as Appl. No. 11/38,129. | ||
| Prior Publication US 2006/0162861 A1, Jul. 27, 2006 | ||
| Int. Cl. B08B 6/00 (2006.01) | ||
| U.S. Cl. 134—1.1 [134/21; 134/22.1; 216/37; 216/67; 216/75; 438/905] | 26 Claims |
| 1. A method for treating a hafnium-based dielectric processing system, comprising:
exposing a system component of the processing system to a chlorine-containing gas;
reacting a residual hafnium by-product remaining in the processing system after a hafnium removal process with a chlorine-containing
etchant derived from the chlorine-containing gas;
volatilizing a chlorinated hafnium product for exhaustion from the processing system;
exposing the system component of the processing system to a pressure of the chlorine-containing etchant between 1 mTorr and
about 1000 Torr; and
introducing a silicon-containing gas and an oxygen-containing gas including NO, O2, or N2O, or a combination of two or more thereof, into the processing system.
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