| US 7,349,268 B2 | ||
| Voltage generation circuit and semiconductor memory device including the same | ||
| Hyong-Ryol Hwang, Seoul (Korea, Republic of); and Young-Hyun Jun, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si (Korea, Republic of) | ||
| Filed on Dec. 02, 2005, as Appl. No. 11/293,890. | ||
| Claims priority of application No. 10-2004-0101925 (KR), filed on Dec. 06, 2004. | ||
| Prior Publication US 2006/0120179 A1, Jun. 08, 2006 | ||
| Int. Cl. G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—189.11 [365/198.09; 365/222; 365/194] | 21 Claims |
| 1. A voltage generation circuit comprising:
a voltage level detector, which detects a level of a first high voltage to generate a first high voltage level detection signal
and detects a level of a second high voltage to generate a second high voltage level detection signal;
a control signal generator, which generates at least three pumping control signals in sequence when the first high voltage
level detection signal is active and generates a control signal when the first high voltage level detection signal is inactive;
and
a voltage generator, which pumps a boost node in response to the at least three pumping control signals to generate the first
high voltage and transmits charge from the boost node to a second high voltage generation terminal generating the second high
voltage in response to the control signal to generate the second high voltage.
|