| US 7,348,624 B2 | ||
| Semiconductor device including a capacitor element | ||
| Akemi Sakaguchi, Kanagawa (Japan); and Toshio Ohkido, Kanagawa (Japan) | ||
| Assigned to NEC Electronics Corporation, Kawasaki, Kanagawa (Japan) | ||
| Filed on Oct. 25, 2005, as Appl. No. 11/256,925. | ||
| Claims priority of application No. 2004-310601 (JP), filed on Oct. 26, 2004. | ||
| Prior Publication US 2006/0086965 A1, Apr. 27, 2006 | ||
| Int. Cl. H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01) | ||
| U.S. Cl. 257—307 [257/296; 257/306] | 19 Claims |
| 15. A semiconductor device comprising:
a capacitor including a first electrode, a second electrode and an insulator therebetween;
a first layer including lines of a first electrode and lines of a second electrode, the lines of the first electrode and the
lines of the second electrode being alternately arranged;
a second layer laminated with the first layer and including lines of the first electrode and the second electrode extending
in a direction different from the lines of the first electrode and the lines of the second electrode in the first layer;
first via holes connecting the lines of the first electrode of the first layer and the lines of the first electrode of the
second layer; and
second via holes connecting the lines of the second electrode of the first layer and the lines of the second electrode of
the second layer,
wherein the first and second via holes are disposed an equal distance from other first and second via holes adjacent said
first and second via holes, respectively,
wherein at least one of the first via holes is disposed an equal distance from at least three other first via holes which
are adjacent to the first via hole, and
wherein at least one of the second via holes is disposed an equal distance from at least three other second via holes which
are adjacent to the second via hole.
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