	US 7,348,253 B2
	High-quality SGOI by annealing near the alloy melting point
Stephen W. Bedell, Wappingers Falls, N.Y. (US); Huajie Chen, Mundelein, Ill. (US); Anthony G. Domenicucci, New Paltz, N.Y. (US); Keith E. Fogel, Mohegan Lake, N.Y. (US); Richard J. Murphy, Clinton Corners, N.Y. (US); and Devendra K. Sadana, Pleasantville, N.Y. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on May 27, 2004, as Appl. No. 10/855,915.
Application 10/855915 is a continuation in part of application No. 10/448948, filed on May 30, 2003, granted, now 7,049,660.
Prior Publication US 2004/0259334 A1, Dec. 23, 2004
Int. Cl. H01L 21/84 (2006.01)

U.S. Cl. 438—407 [438/480]

13 Claims

1. A method of producing a SiGe-on-insulator substrate material comprising:

forming a Ge-containing layer having a preselected Ge content on a surface of a first single crystal Si layer, said first single crystal Si layer is present atop a barrier layer that is resistant to Ge diffusion; and

heating said Ge-containing layer and said Si layer to a temperature at the melting point of said Ge-containing layer or at a temperature of about 50° C. below the melting point but above 1230° C., of said Ge-containing layer which causes a substantial reduction in strained relaxation defects, surface pitting and crosshatching, limits stacking fault defects, while permitting interdiffusion of Ge throughout said first single crystal Si layer and said Ge-containing layer thereby forming a low-defect, substantially relaxed, single crystal SiGe layer atop said barrier layer, said heating comprises an oxidation process that provides said SiGe layer with a surface having a surface roughness of less than 15 Å RMS.