| US 7,348,200 B2 | ||
| Method of growing non-polar a-plane gallium nitride | ||
| Soo Min Lee, Seoul (Korea, Republic of); Rak Jun Choi, Tokushima (Japan); Naoi Yoshiki, Tokushima (Japan); Sakai Shiro, Tokushima (Japan); and Masayoshi Koike, Kyungki-do (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co. Ltd., Suwon, Kyungki-Do (Korea, Republic of); and The University of Tokushima, Tokushima (Japan) | ||
| Filed on Mar. 03, 2006, as Appl. No. 11/368,184. | ||
| Claims priority of application No. 10-2005-0025184 (KR), filed on Mar. 25, 2005. | ||
| Prior Publication US 2006/0216914 A1, Sep. 28, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—46 [257/E33.023; 257/78; 257/187; 257/615] | 12 Claims |
| 1. A method of growing a non-polar a-plane gallium nitride comprising steps of:
(a) preparing an r-plane substrate;
(b) depositing a low-temperature nitride-based nucleation layer on the substrate; and
(c) growing the non-polar a-plane gallium nitride on the nucleation layer,
wherein the growing step (c) is carried out under the condition that a gallium source is supplied at a flow rate of about
190 μmol/min to about 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to
2310,
wherein the pressure for growing the gallium nitride is about 0.5 atm or higher.
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