US 7,348,129 B2
Electron beam processing method and apparatus
Kazuyuki Mitsuoka, Nirasaki (Japan); Minoru Honda, Nirasaki (Japan); Song Yun Kang, Nirasaki (Japan); and Yusuke Saito, Nirasaki (Japan)
Assigned to Tokyo Electron Limited, Tokyo (Japan)
Filed on Mar. 29, 2004, as Appl. No. 10/810,633.
Claims priority of application No. 2003-091878 (JP), filed on Mar. 28, 2003.
Prior Publication US 2004/0248040 A1, Dec. 09, 2004
Int. Cl. G03C 5/00 (2006.01); A61N 5/00 (2006.01)
U.S. Cl. 430—296  [430/942; 427/551; 427/595; 250/492.2; 250/492.3] 10 Claims
 
1. An electron beam processing method for processing an organic material film formed on a surface of an object to be processed by using an electron beam,
wherein the electron beam is irradiated onto the organic material film through a hydrocarbon radical generating gas, a partial pressure of which is greater than or equal to 0.1 Torr.