an electro-optical substance layer;

a pair of substrates facing one another across said electro-optical substance layer so as to sandwich said electro-optical substance layer therebetween; and

a layered structure formed on one of said substrates, said layered structure including

scanning lines formed in a first direction,

data lines formed in a second direction which intersects said first direction,

pixel electrodes formed corresponding to intersection portions of said scanning lines and said data lines,

transistors for controlling switching of said pixel electrodes,

storage capacitors electrically connected to said pixel electrodes, and

a fixed electrode layer for supplying a fixed potential to one electrode of said storage capacitors,

said scanning lines, said data lines, said transistors, and said storage capacitors, being arrayed within a light shielding region around said pixel electrodes;

wherein said pixel electrodes, and a semiconductor layer where said transistors are formed, are electrically connected via a first relay electrode layer at the same layer as said fixed electrode layer and a second relay electrode layer at the same layer as said data lines;

and wherein said fixed electrode layer is discontinuous between adjacent data lines in said first direction, with said first relay electrode layer being formed at this discontinuous portion in a separated state from said fixed electrode layer, and with a plurality of contact holes formed in a formation region of said first relay electrode layer in a state of electrically connecting to said first relay electrode layer, said contact holes being arrayed so as to be adjacent one to another in said second direction.