US 7,508,369 B2
Driving technique for activating liquid crystal device
Mika Nakamura, Hirakata (Japan); Katsumi Adachi, Kashiba (Japan); Kiyohiro Kawasaki, Hirakata (Japan); and Katsuji Hattori, Takarazuka (Japan)
Assigned to Toshiba Matsushita Display Technology Co., Inc., Tokyo (Japan)
Filed on Jun. 15, 2004, as Appl. No. 10/866,764.
Application 10/866764 is a division of application No. 09/868184, granted, now 7,023,416, previously published as PCT/JP00/07291, filed on Oct. 19, 2000.
Claims priority of application No. H11-296329 (JP), filed on Oct. 19, 1999; application No. H11-344477 (JP), filed on Dec. 03, 1999; application No. 2000-030046 (JP), filed on Feb. 08, 2000; application No. 2000-114870 (JP), filed on Apr. 17, 2000; and application No. 2000-129146 (JP), filed on Apr. 28, 2000.
Prior Publication US 2004/0222958 A1, Nov. 11, 2004
Int. Cl. G09G 3/36 (2006.01)
U.S. Cl. 345—99  [345/94] 13 Claims
OG exemplary drawing
 
1. A method for driving a liquid crystal device to cause transition from a splay configuration to a bend configuration of a liquid crystal layer, located between a first substrate on which thin film transistors, gate lines, pixel electrodes, and others are located in a matrix and a second substrate on which an opposing electrode is located, the method comprising:
applying an electric field between the liquid crystal layer located between the gate line on the first substrate and the opposing electrode on the second substrate, the electric field being higher than an electric field applied to the liquid crystal layer in other regions of the liquid crystal device.