| US 7,508,082 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Toshiyuki Takewaki, Kawasaki (Japan); and Noriaki Oda, Kawasaki (Japan) | ||
| Assigned to NEC Electronics Corporation, Kanagawa (Japan) | ||
| Filed on Aug. 24, 2007, as Appl. No. 11/844,381. | ||
| Application 11/844381 is a division of application No. 10/953454, filed on Sep. 30, 2004, granted, now 7,327,031. | ||
| Claims priority of application No. 2003-340983 (JP), filed on Sep. 30, 2003. | ||
| Prior Publication US 2008/0017993 A1, Jan. 24, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01) | ||
| U.S. Cl. 257—786 [257/750; 257/751; 257/767; 257/778; 257/779; 257/780; 257/781; 257/E23.019; 257/E23.02] | 6 Claims |
| 1. A semiconductor device comprising:
a bonding pad that is an electric coupling for an external circuit, said bonding pad having at least one metal area and a
plurality of insulating areas with a plurality of interfaces therebetween;
an insulating film disposed on said bonding pad, said insulating film having an opening exposing at least part of said metal
area, said insulating film covering all of said plurality of interfaces closest to a center of said opening; and
a diffusion barrier film on said bonding pad beneath said insulating film.
|