| US 7,508,068 B2 | ||
| Semiconductor module and power conversion device | ||
| Atsuhiro Yoshizaki, Hitachinaka (Japan); Keiichi Mashino, Hitachinaka (Japan); Hiromichi Anan, Nishiibaraki (Japan); and Yoshitaka Ochiai, Hitachi (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan); and Hitachi Car Engineering Co., Ltd., Hitachinaka-shi (Japan) | ||
| Filed on Feb. 01, 2007, as Appl. No. 11/670,365. | ||
| Application 11/670365 is a division of application No. 10/610816, filed on Jul. 02, 2003, granted, now 7,193,317. | ||
| Claims priority of application No. 2002-194078 (JP), filed on Jul. 03, 2002. | ||
| Prior Publication US 2007/0159864 A1, Jul. 12, 2007 | ||
| Int. Cl. H01L 23/34 (2006.01) | ||
| U.S. Cl. 257—721 [257/102] | 8 Claims |
| 1. A power conversion device comprising:
a semiconductor device;
insulating substrates, each connected to either the surfaces of said semiconductor device;
thermal-conductive members, each connected to the opposite side of each said insulating substrate with respect to said semiconductor
device, said semiconductor device, insulating substrate and thermal-conductive member forming laminated structure section;
a positive-pole semiconductor module and a negative-pole semiconductor module, each with one of said thermal-conductive members
being connected to the other end thereof across the laminated structure section formed by said semiconductor device and said
insulating substrates;
input/output wiring electrically connected to said semiconductor device; and
a heat-releasing structure releasing the heat transmitted to said thermal-conductive members to the outside.
|