US 7,508,046 B2
Photodetector
Youichi Nagai, Osaka (Japan); Yasuhiro Iguchi, Osaka (Japan); and Hiroshi Inada, Osaka (Japan)
Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan)
Filed on Feb. 21, 2007, as Appl. No. 11/709,393.
Claims priority of application No. 2006-045512 (JP), filed on Feb. 22, 2006.
Prior Publication US 2007/0194401 A1, Aug. 23, 2007
Int. Cl. H01L 31/0224 (2006.01)
U.S. Cl. 257—459  [257/431; 257/432; 257/E31.124] 15 Claims
OG exemplary drawing
 
1. A photodetector comprising a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer epitaxially grown on the common semiconductor substrate and being provided with an epitaxial-side electrode,
wherein each photodiode is provided with at least one of a ring-shaped or crescent-shaped epitaxial-side electrode, an incident-side-limited condensing part which condenses incident light that is directed to the corresponding photodiode only, and emission means which is disposed on a side opposite to a light-incident side of the absorption layer and which allows light entering from the light-incident side to be easily emitted out of the photodiode.