| US 7,508,021 B2 | ||
| RF power transistor device with high performance shunt capacitor and method thereof | ||
| Xiaowei Ren, Phoenix, Ariz. (US); and Daniel J. Lamey, Phoenix, Ariz. (US) | ||
| Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
| Filed on Jun. 10, 2007, as Appl. No. 11/760,775. | ||
| Prior Publication US 2007/0297120 A1, Dec. 27, 2007 | ||
| Int. Cl. H01L 27/108 (2006.01) | ||
| U.S. Cl. 257—296 [257/318; 257/532; 361/309] | 20 Claims |
| 1. An integrated shunt capacitor comprising:
a conductive bottom plate;
a capacitor dielectric overlying a portion of the bottom plate;
a conductive top plate overlying the capacitor dielectric;
a shield overlying a portion of the top plate, wherein the shield is isolated from the top plate; and
a metallization feature disposed (i) along at least two sides of the top plate and (ii) isolated from the at least two sides
of the top plate, wherein the metallization feature electrically couples the bottom plate to the overlying shield, further
wherein (iii)(a) the metallization feature that extends along and is isolated from the sides of the top plate, (iii)(b) the
bottom plate, and (iii)(c) the overlying shield together form a grounded chamber for isolating a corresponding portion of
the integrated shunt capacitor from parasitic interference external to the integrated shunt capacitor.
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