| US 7,508,011 B2 | ||
| Semiconductor light generating device | ||
| Katsushi Akita, Itami (Japan); Takao Nakamura, Itami (Japan); and Hideki Hirayama, Wako (Japan) | ||
| Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan); and Riken, Saitama (Japan) | ||
| Filed on Nov. 09, 2007, as Appl. No. 11/979,873. | ||
| Application 11/979873 is a division of application No. 11/032230, filed on Jan. 11, 2005, granted, now 7,294,867. | ||
| Claims priority of application No. P2004-007325 (JP), filed on Jan. 14, 2004. | ||
| Prior Publication US 2008/0076199 A1, Mar. 27, 2008 | ||
| Int. Cl. H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—103 [257/101; 257/102; 257/E33.029; 438/45; 438/37; 438/46] | 16 Claims |
| 1. A method of making a semiconductor light generating device, the method comprising the steps of:
forming an active region including an undoped InAlGaN semiconductor film;
forming an undoped AlX2Ga1-X2N semiconductor film (0≤X2≤1) on the active region; and
forming a p-type AlX1Ga1-X1N semiconductor film (0≤X1≤1) and one or more gallium nitride based semiconductor films on the undoped AlX2Ga1-X2N semiconductor film and causing p-type dopant atoms in the p-type AlX1Ga1-X1N semiconductor film to diffuse to the undoped AlX2Ga1-X2N semiconductor film.
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