| US 7,507,670 B2 | ||
| Silicon electrode assembly surface decontamination by acidic solution | ||
| Hong Shih, Walnut, Calif. (US); Tuochuan Huang, Saratoga, Calif. (US); and Chunhong Zhou, Fremont, Calif. (US) | ||
| Assigned to Lam Research Corporation, Fremont, Calif. (US) | ||
| Filed on Dec. 23, 2004, as Appl. No. 11/19,726. | ||
| Prior Publication US 2006/0141802 A1, Jun. 29, 2006 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—704 [257/347; 438/459; 137/3] | 21 Claims |
| 1. A method of cleaning a used electrode assembly for generating plasma in a plasma etch chamber comprising a plasma-exposed
silicon surface, the method comprising contacting the silicon surface with an acidic cleaning solution comprising:
0.25 to 1% by volume hydrofluoric acid;
10 to 40% by volume nitric acid;
10 to 20% by volume acetic acid; and
balance deionized water; and
wherein contaminants are removed from the silicon surface; and
further wherein the silicon surface is not discolored as the acetic acid is present in an amount effective to control oxidation
by the nitric acid.
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