| US 7,507,666 B2 | ||
| Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition | ||
| Yoshiyuki Nakao, Kawasaki (Japan); Hideki Kitada, Kawasaki (Japan); Nobuyuki Ohtsuka, Kawasaki (Japan); and Noriyoshi Shimizu, Kawasaki (Japan) | ||
| Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan) | ||
| Filed on Dec. 06, 2005, as Appl. No. 11/294,471. | ||
| Claims priority of application No. 2005-249651 (JP), filed on Aug. 30, 2005. | ||
| Prior Publication US 2007/0049024 A1, Mar. 01, 2007 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—687 [438/618; 438/643; 257/E21.171; 257/E21.591] | 7 Claims |
| 1. A semiconductor device manufacture method comprising:
(a) forming an insulating film having a concave portion, on a semiconductor substrate;
(b) covering an inner surface of the concave portion and an upper surface of the insulating film with an auxiliary film made
of Cu alloy containing a first metal element other than Cu;
(c) depositing a conductive member containing Cu as a main composition on the auxiliary film, the conductive member being
embedded in the concave portion;
(d) performing heat treatment in an atmosphere containing P compound, Si compound or B compound; and
(e) after the heat treatment, removing a portion of the conductive member by chemical mechanical polishing such that another
portion of the conductive member is left in the concave portion.
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