| US 7,506,609 B2 | ||
| System for generating a local electron-cyclotron microwave low-pressure plasma at a predetermined location within a processing chamber | ||
| Sven Ulrich, Stutensee (Germany); Michael Stüber, Landau (Germany); Harald Leiste, Weingarten (Germany); Lorenz Niederberger, Heidelberg (Germany); Konrad Sell, Karlsruhe (Germany); Martina Lattemann, Tubingen (Germany); and Roland Loos, Furtwangen (Germany) | ||
| Assigned to Forschungszentrum Karlsruhe GmbH, Karlsruhe (Germany) | ||
| Filed on May 17, 2004, as Appl. No. 10/847,555. | ||
| Application 10/847555 is a continuation in part of application No. PCT/EP02/11601, filed on Oct. 17, 2002. | ||
| Claims priority of application No. 101 56 615 (DE), filed on Nov. 17, 2001. | ||
| Prior Publication US 2004/0255867 A1, Dec. 23, 2004 | ||
| Int. Cl. C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01) | ||
| U.S. Cl. 118—723MW [156/345.41; 156/345.42] | 20 Claims |
| 1. An arrangement for generating a local electron-cyclotron microwave resonance (ECR) low pressure plasma at a predeterminable
location within a process chamber (14), the arrangement comprising:
a process chamber (14) with a microwave transparent window (12), through which a selected gas of a predetermined density n can be introduced into the process chamber,
a microwave source (1),
a microwave reflection structure (10) having a shell-like reflection area with a focal point or line (B) arranged opposite the microwave transparent window (12),
a microwave guide (1′) extending from the microwave source (1) to the focal point or line (B) and having an uncoupling opening in the focal point or line (B) for directing the microwaves
directly onto the microwave reflection structure (10), so that a parallel microwave beam (13) is formed which is directed through the microwave transparent window (12) into the process chamber (14),
a substrate holder (16) with a substrate (18) disposed thereon arranged in the process chamber opposite the microwave transparent window (12),
a magnetic field generating device (24) including magnets having S- and, respectively N-poles arranged in the process chamber (14) at opposite sides of the microwave beam (13) between the substrate holder (16) and the microwave transparent window (12) and having a pole axis extending perpendicularly to the microwave beam (13) whereby the microwave beam (13) passes through a magnetic field (B0) generated by the magnetic field generating device (24) and a cross volume (26) of at least 0.5 cm3 is formed in which the magnetic field has such a strength, that the input microwave radiation with the excitation frequency
ωE is essentially equal to the electron-cyclotron frequency ωEZ so that ECR conditions are established, wherein
ωEZ=e0/me×B0,
e0 being the elementary charge and me being the electron mass so that a plasma of increased density is formed in the cross-volume (26),
the magnetic field generating device (24) being movable together with the cross volume (26) in which ECR conditions exist along the microwave beam into direct interactive contact with the substrate (18).
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