US 7,345,352 B2
Insulating tube, semiconductor device employing the tube, and method of manufacturing the same
Tsuyoshi Matsumura, Yokohama (Japan); Takahito Nakajima, Yokohama (Japan); Hiroshi Kawamoto, Kamakura (Japan); Mikie Miyasato, Yokohama (Japan); and Yoshihiro Uozumi, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Mar. 09, 2007, as Appl. No. 11/715,844.
Application 11/715844 is a division of application No. 11/244293, filed on Oct. 06, 2005, granted, now 7,282,437.
Application 11/244293 is a division of application No. 10/693504, filed on Oct. 27, 2003, granted, now 6,995,472, filed on Feb. 07, 2006.
Claims priority of application No. P2003-202486 (JP), filed on Jul. 28, 2003.
Prior Publication US 2007/0170594 A1, Jul. 26, 2007
Int. Cl. H01L 29/00 (2006.01)
U.S. Cl. 257—513  [257/210; 257/211; 257/774; 257/758] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first interlayer insulating film disposed on the substrate;
an underlying insulating film disposed on the first interlayer insulating film;
a first sidewall insulating film disposed on the underlying insulating film;
a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as to provide a cavity between the first and second sidewall insulating films having the same height as the first sidewall insulating film;
an upper insulating film provided over the first and second sidewall insulating films, including:
a central beam laid over the first and second sidewall insulating films so as to seal an upper portion of the cavity;
a first side-beam disposed on the first sidewall insulating film having the same height as the central beam; and
a second side-beam disposed on the second sidewall insulating film and having the same height as the first side-beam so as to sandwich the central beam with the first side-beam; and
a wiring disposed around the first and second sidewall insulating films.