| US 7,505,308 B1 | ||
| Systems involving spin-transfer magnetic random access memory | ||
| Solomon Assefa, Ossining, N.Y. (US); William J. Gallagher, Ardsley, N.Y. (US); Chung H. Lam, Peekskill, N.Y. (US); and Jonathan Z. Sun, Shrub Oak, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on May 09, 2008, as Appl. No. 12/118,441. | ||
| Int. Cl. G11C 11/14 (2006.01); G11C 11/15 (2006.01); G11C 11/16 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173; 365/225.5; 257/414; 257/421] | 2 Claims |
| 1. A magnetic random access memory system comprising:
a spin-current generating portion including:
a ferromagnetic film layer; and
a conductance layer;
a first write portion in electrical contact with the ferromagnetic film including a selection device;
a first read portion in electrical contact with the conductance layer including:
a free layer magnet;
a read non-magnetic layer; and
a reference layer;
a second write portion in electrical contact with the ferromagnetic film; and
a second read portion in electrical contact with the conductance layer.
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