| US 7,504,198 B2 | ||
| Methods for enhancing resolution of a chemically amplified photoresist | ||
| Bruno LaFontaine, Pleasanton, Calif. (US); Adam R. Pawloski, San Jose, Calif. (US); and Thomas Wallow, San Carlos, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on May 24, 2006, as Appl. No. 11/439,847. | ||
| Prior Publication US 2007/0275321 A1, Nov. 29, 2007 | ||
| Int. Cl. G03F 7/00 (2006.01); G03F 7/004 (2006.01) | ||
| U.S. Cl. 430—311 [430/330; 430/270.1; 430/281.1; 430/313; 430/944; 430/945] | 25 Claims |
| 1. A method for enhancing resolution of a chemically amplified photoresist, the method comprising the steps of:
depositing on a substrate a film comprising a photoacid generator and a polymer comprising functional groups bonded to protecting
moieties;
exposing the film to patterned radiation, wherein the patterned radiation results in protonation of a portion of the functional
groups and the formation of a latent image within the film; and
selectively exciting the bonds between the protonated functional groups and the protecting moieties with non-thermal energy
having a wavelength spectrum that resonantly cleaves the bonds, wherein the step of selectively exciting is performed after
the step of exposing the film to patterned radiation.
|