| US 7,502,206 B2 | ||
| Multiple extraordinary magnetoresistive (EMR) sensor utilizing both current leads | ||
| Bruce Alvin Gurney, San Rafael, Calif. (US); Stefan Maat, San Jose, Calif. (US); Ernesto E. Marinero, Saratoga, Calif. (US); and Bruce Alexander Wilson, San Jose, Calif. (US) | ||
| Assigned to Hitachi Global Storage Technologies Netherlands B.V., Amsterdam (Netherlands) | ||
| Filed on Jul. 24, 2006, as Appl. No. 11/492,375. | ||
| Prior Publication US 2008/0019055 A1, Jan. 24, 2008 | ||
| Int. Cl. G11B 5/33 (2006.01) | ||
| U.S. Cl. 360—313 | 23 Claims |
| 1. An extraordinary magnetoresistive sensor (EMR sensor), comprising:
a semiconductor structure;
an electrically conductive shunt structure connected with the semiconductor structure at a first side of the semiconductor
structure;
a pair of current leads, electrically connected with the semiconductor structure at a second side of the semiconductor structure
that is opposite the first side;
first and second voltage leads electrically connected with the second side of the semiconductor structure and arranged so
that the first current lead is disposed between the first and second voltage leads; and
third and fourth voltage leads electrically connected with the second side of the semiconductor structure and arranged so
that the second current lead is disposed between the third and fourth voltage leads.
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