sequentially depositing a first metal layer and an impurity-doped amorphous silicon layer on a substrate;

etching the first metal layer and the impurity-doped amorphous silicon layer through a first mask process to form source and drain electrodes, a data line and an ohmic contact layer;

sequentially depositing an amorphous silicon layer, a first insulating layer and a second metal layer on the source and drain electrodes, the data line and the ohmic contact layer;

etching the amorphous silicon layer, the first insulating layer and the second metal layer through a second mask process to form a gate electrode, a gate line, an active layer and a plurality of convex patterns, the gate line defining a pixel region with the data line;

forming a second insulating layer on the gate electrode, the gate line and the plurality of convex patterns;

forming a reflective plate on the second insulating layer at the pixel region through a third mask process, the reflective plate having a transmissive hole and an unevenness;

depositing a third insulating layer on the reflective plate;

etching the third insulating layer through a fourth mask process to form a drain contact hole exposing the drain electrode and a transmissive groove corresponding to the transmissive hole; and

forming a pixel electrode on the third insulating layer through a fifth mask process, the pixel electrode being connected to the drain electrode through the drain contact hole.