| US 7,501,688 B2 | ||
| Spin injection magnetization reversal element | ||
| Akira Saito, Yokosuka (Japan) | ||
| Assigned to Fuji Electric Holdings Co., Ltd., (Japan) | ||
| Filed on Jun. 27, 2006, as Appl. No. 11/475,835. | ||
| Claims priority of application No. 2005-185876 (JP), filed on Jun. 27, 2005. | ||
| Prior Publication US 2007/0001251 A1, Jan. 04, 2007 | ||
| Int. Cl. H01L 29/82 (2006.01) | ||
| U.S. Cl. 257—421 [257/422] | 22 Claims |
| 1. A spin injection magnetization reversal element comprising, in order, a ferromagnetic fixed layer, an isolation layer and
a ferromagnetic free layer, in which element flow of a current between the ferromagnetic fixed layer and the ferromagnetic
free layer causes transition between a state in which the direction of the magnetization of the ferromagnetic fixed layer
and the direction of the magnetization of the ferromagnetic free layer are in parallel with each other and a state in which
the directions of the magnetization are in antiparallel with each other,
wherein the ferromagnetic fixed layer surrounds the ferromagnetic free layer,
wherein a free layer electrode is electrically connected to the ferromagnetic free layer apart from the ferromagnetic fixed
layer and a fixed layer electrode is electrically connected to the ferromagnetic fixed layer apart from the ferromagnetic
free layer, and
wherein an area with which the ferromagnetic fixed layer is in contact with the isolation layer is larger than an area with
which the ferromagnetic free layer is in contact with the isolation layer.
|