| US 7,501,684 B2 | ||
| Methods of forming semiconductor constructions | ||
| Sanh D. Tang, Boise, Id. (US); Gordon Haller, Boise, Id. (US); Kris K. Brown, Garden City, Id. (US); and Tuman Earl Allen, III, Kuna, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jul. 31, 2006, as Appl. No. 11/496,930. | ||
| Application 11/496930 is a division of application No. 10/932150, filed on Sep. 01, 2004. | ||
| Prior Publication US 2006/0261393 A1, Nov. 23, 2006 | ||
| Int. Cl. H01L 29/76 (2006.01) | ||
| U.S. Cl. 257—330 [257/296; 257/E29.26] | 20 Claims |
| 1. A method of forming a semiconductor construction, cormprising:
providing a semiconductor substrate comprising an uppermost surface;
forming an opening into the semiconductor substrate;
forming an oxide film over the semiconductor substrate within the opening;
providing conductive gate material over the oxide film and filling the opening;
forming a pair of diffusion regions within the semiconductor substrate, wherein at least one of the pair of the diffusion
regions is formed before the forming of the opening, and the at least one of the pair of the diffusion regions extends outward
from the uppermost surface; and
forming a channel region extending generally vertically within the semiconductor substrate.
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