| US 7,501,671 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Takashi Hamada, Kanagawa (Japan); Satoshi Murakami, Kanagawa (Japan); Shunpei Yamazaki, Tokyo (Japan); Osamu Nakamura, Kanagawa (Japan); Masayuki Kajiwara, Kanagawa (Japan); Junichi Koezuka, Kanagawa (Japan); and Toru Takayama, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Mar. 28, 2007, as Appl. No. 11/729,241. | ||
| Application 11/729241 is a continuation of application No. 10/867515, filed on Jun. 14, 2004, granted, now 7,198,992. | ||
| Application 10/867515 is a continuation of application No. 10/051064, filed on Jan. 18, 2002, granted, now 6,913,956, filed on Jul. 05, 2005. | ||
| Claims priority of application No. 2001-11085 (JP), filed on Jan. 19, 2001; and application No. 2001-22062 (JP), filed on Jan. 30, 2001. | ||
| Prior Publication US 2007/0187761 A1, Aug. 16, 2007 | ||
| Int. Cl. H01L 27/148 (2006.01); H01L 29/74 (2006.01); H01L 29/768 (2006.01) | ||
| U.S. Cl. 257—223 [257/291; 257/439; 257/655; 438/149] | 20 Claims |
| 1. An active matrix light emitting device comprising:
a pixel portion including a plurality of pixels, wherein each of said pixels comprising:
a thin film transistor comprising:
a semiconductor layer;
a gate electrode; and
an insulating layer interposed between the semiconductor layer and the gate electrode;
a first electrode comprising zinc oxide electrically connected to the semiconductor layer;
a partition layer to cover a part of the first electrode;
an organic compound layer over the first electrode; and
a second electrode over the organic compound,
wherein an end of said partition layer is reversely tapered.
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