| US 7,501,653 B2 | ||
| Method of manufacturing semiconductor device having a circuit including thin film transistors | ||
| Yasuyuki Arai, Kanagawa (Japan); and Shinji Maekawa, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Sep. 12, 2005, as Appl. No. 11/222,763. | ||
| Application 11/222763 is a division of application No. 10/959071, filed on Oct. 07, 2004, granted, now 6,953,717. | ||
| Application 10/959071 is a division of application No. 10/112717, filed on Apr. 02, 2002, granted, now 6,809,023. | ||
| Claims priority of application No. 2001-109295 (JP), filed on Apr. 06, 2001. | ||
| Prior Publication US 2006/0006388 A1, Jan. 12, 2006 | ||
| Int. Cl. H01L 29/04 (2006.01); H01L 31/20 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01) | ||
| U.S. Cl. 257—59 [257/72; 257/347] | 15 Claims |
| 1. A semiconductor device comprising:
a silicon nitride film on an insulating surface;
a light shielding film over the patterned silicon nitride film;
a silicon oxide film formed over the patterned light shielding film;
a semiconductor layer over the silicon oxide film;
a gate insulating film covering the semiconductor layer; and a wiring formed over the gate insulating film, wherein the wiring
is electrically connected to the light shielding film.
|