| US 7,501,344 B2 | ||
| Formation of boride barrier layers using chemisorption techniques | ||
| Jeong Soo Byun, Cupertino, Calif. (US); and Alfred Mak, Union City, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Apr. 24, 2007, as Appl. No. 11/739,549. | ||
| Application 11/739549 is a continuation of application No. 10/993925, filed on Nov. 19, 2004, granted, now 7,208,413. | ||
| Application 10/993925 is a continuation of application No. 10/387990, filed on Mar. 13, 2003, granted, now 6,831,004. | ||
| Application 10/387990 is a continuation of application No. 09/604943, filed on Jun. 27, 2000, granted, now 6,620,723. | ||
| Prior Publication US 2007/0197028 A1, Aug. 23, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—680 [438/656; 257/E21.168] | 21 Claims |
| 1. A method for depositing a boride-containing barrier layer on a substrate, comprising:
exposing a substrate sequentially and cyclically to a boron-containing compound, a purge gas, and a tungsten precursor to
form a first boride-containing layer comprising tungsten and boron during a first sequential chemisorption process; and
exposing the substrate sequentially and cyclically to the boron-containing compound, an ammonia purge gas, and the tungsten
precursor to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption
process.
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