| US 7,501,318 B2 | ||
| Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal | ||
| Stephen W. Bedell, Wappingers Falls, N.Y. (US); Keith E. Fogel, Mohegan Lake, N.Y. (US); Devendra K. Sadana, Pleasantville, N.Y. (US); and Ghavam G. Shahidi, Pound Ridge, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Nov. 09, 2004, as Appl. No. 10/984,212. | ||
| Application 10/984212 is a division of application No. 10/448947, filed on May 30, 2003, granted, now 6,855,436. | ||
| Prior Publication US 2005/0095803 A1, May 05, 2005 | ||
| Int. Cl. H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—151 [257/E21.561] | 27 Claims |
| 1. A method of producing a substantially relaxed, high-quality SiGe-on-insulator substrate material comprising:
implanting ions into a bulk Si-containing substrate to form an ion implant rich region, said ion implant rich region having
a surface layer of the Si-containing substrate located thereon;
forming a Ge-containing layer directly on and entirely across said surface layer of said bulk Si-containing substrate containing
said ion implant rich region; and
performing a single heating step on the Ge-containing layer and the bulk Si-containing substrate containing said ion implant
rich region at a temperature which (i) converts said ion implant rich region into a diffusion barrier layer, and (ii) interdiffuses
Ge throughout said Ge-containing layer and said surface layer of the bulk Si-containing substrate located above the ion implant
rich region thereby forming a substantially relaxed SiGe layer atop said diffusion barrier layer.
|