| US 7,501,316 B2 | ||
| Asymmetric memory cell | ||
| Ali Keshavarzi, Portland, Oreg. (US); Stephen H. Tang, Beaverton, Oreg. (US); Dinesh Somasekhar, Portland, Oreg. (US); Fabrice Paillet, Hillsboro, Oreg. (US); Muhammad M. Khellah, Lake Oswego, Oreg. (US); Yibin Ye, Portland, Oreg. (US); Shih-Lien L. Lu, Portland, Oreg. (US); and Vivek K. De, Beaverton, Oreg. (US) | ||
| Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
| Filed on Nov. 07, 2005, as Appl. No. 11/268,098. | ||
| Application 11/268098 is a division of application No. 10/750572, filed on Dec. 31, 2003, granted, now 6,992,339. | ||
| Prior Publication US 2006/0054933 A1, Mar. 16, 2006 | ||
| Int. Cl. H01L 21/82 (2006.01) | ||
| U.S. Cl. 438—128 [438/238; 257/202; 257/316; 365/149] | 4 Claims |
| 1. A method to write a value to a memory cell, comprising:
forward-biasing a first junction formed by a body region of the memory cell, the body region doped with charge carriers of
a first type, and a drain region disposed within the body region, the drain region doped with charge carriers of a second
type, to eject charge carriers of the first type from the body region,
wherein the body region is disposed within a substrate doped with charge carriers of the first type,
wherein a source region disposed in the body region is doped with charge carriers of the second type and is coupled to ground,
wherein the body region and the source region form a second junction, and
wherein a conductivity of the second junction from the body region to the source region in a case that the second junction
is unbiased is substantially less than a conductivity of the first junction from the body region to the drain region in a
case that the first junction is unbiased,
wherein the memory cell comprises a first halo implant disposed in the body region, the first halo implant doped with charge
carriers of the first type, the first halo implant and the drain region to form at least a portion of the first junction,
wherein the memory cell comprises a second halo implant disposed in the body region, the second halo implant doped with charge
carriers of the first type, the second halo implant and the source region to form at least a portion of the second junction;
wherein a concentration of charge carriers of the first type in the first halo region is greater than a concentration of charge
carriers of the first type in the substrate, and the concentration of charge carriers of the first type in the substrate is
greater than a concentration of charge carriers of the first type in the body; and
wherein a concentration of charge carriers of the second type in the drain region is greater than a concentration of charge
carriers of the second type in the source region.
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