US 7,501,312 B2
	Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer
Takanobu Koshimizu, Nagoya (Japan); Makoto Kataoka, Sodegaura (Japan); Masafumi Miyakawa, Nagoya (Japan); Hideki Fukumoto, Nagoya (Japan); and Yoshihisa Saimoto, Nagoya (Japan)
Assigned to Mitsui Chemicals, Inc., Tokyo (Japan)
Filed on Jan. 27, 2005, as Appl. No. 11/51,625.
Claims priority of application No. 2004-019431 (JP), filed on Jan. 28, 2004.
Prior Publication US 2005/0164509 A1, Jul. 28, 2005
Int. Cl. H01L 21/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01)

U.S. Cl. 438—118  [257/E21.237; 257/E21.505; 438/690]

6 Claims

1. A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer with an adhesive film for protection of the semiconductor wafer comprising an adhesive layer formed on one surface of a base film, the method comprising a first step of adhering the adhesive layer of the adhesive film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and processing a non-circuit-formed surface of the semiconductor wafer, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer wherein the heating of the second step is conducted prior to the processing of the semiconductor wafer.