| US 7,499,305 B2 | ||
| Semiconductor device and driving method of the same | ||
| Ryoji Nomura, Yamato (Japan); Hiroko Abe, Setagaya (Japan); Yuji Iwaki, Atsugi (Japan); and Shunpei Yamazaki, Setagaya (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Appl. No. 11/547,304 PCT Filed Oct. 12, 2005, PCT No. PCT/JP2005/019156 § 371(c)(1), (2), (4) Date Oct. 04, 2006, PCT Pub. No. WO2006/043573, PCT Pub. Date Apr. 27, 2006. |
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| Claims priority of application No. 2004-303595 (JP), filed on Oct. 18, 2004. | ||
| Prior Publication US 2007/0153565 A1, Jul. 05, 2007 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—148 [365/189.01] | 37 Claims |
| 1. A semiconductor device comprising:
a bit line extending in a first direction;
a word line extending in a second direction that is different from the first direction;
a memory cell provided at an intersecting portion of the bit line and the word line; and
a memory element provided in the memory cell,
wherein the memory element comprises an organic compound layer disposed between the bit line and the word line, and
wherein the memory element is arranged to change a distance between the bit line and the word line when a voltage is applied
between the bit line and the word line.
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