| US 7,498,640 B2 | ||
| Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby | ||
| Cyril Cabral, Jr., Ossining, N.Y. (US); Kevin K. Chan, Staten Island, N.Y. (US); Guy Moshe Cohen, Mohegan Lake, N.Y. (US); Kathryn Wilder Guarini, Yorktown Heights, N.Y. (US); Christian Lavoie, Ossining, N.Y. (US); Paul Michael Solomon, Yorktown Heights, N.Y. (US); and Ying Zhang, Yorktown Heights, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on May 15, 2003, as Appl. No. 10/437,930. | ||
| Prior Publication US 2004/0108598 A1, Jun. 10, 2004 | ||
| Int. Cl. H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01) | ||
| U.S. Cl. 257—382 [257/383; 257/384; 257/754; 438/300; 438/596] | 31 Claims |
| 1. A semiconductor structure, comprising:
a substrate;
an insulating layer formed on said substrate;
a silicon layer formed on said insulating layer;
a non-planar silicon containing region formed on said silicon layer; and
a metal silicide contact formed on said non-planar silicon containing region,
wherein said non-planar silicon containing region includes a SiGe baffler layer which is formed on an outer surface of said
non-planar silicon containing region and on said insulating layer and on first and second sides of said silicon layer, and
wherein an interface between said metal silicide contact and said non-planar silicon-containing region is at an angle other
than zero with respect to a surface of said substrate.
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