US 7,498,633 B2
High-voltage power semiconductor device
James A. Cooper, West Lafayette, Ind. (US); and Asmita Saha, Hillsboro, Oreg. (US)
Assigned to Purdue Research Foundation, West Lafayette, Ind. (US)
Filed on Jan. 23, 2006, as Appl. No. 11/338,007.
Claims priority of provisional application 60/646152, filed on Jan. 21, 2005.
Prior Publication US 2006/0192256 A1, Aug. 31, 2006
Int. Cl. H01L 29/94 (2006.01)
U.S. Cl. 257—341  [257/263; 257/256] 15 Claims
OG exemplary drawing
 
1. A metal-oxide semiconductor field-effect transistor comprising:
a silicon-carbide substrate having a first concentration of first type impurities;
a drift semiconductor layer formed on a front side of the semiconductor substrate and having a second concentration of first type impurities less than the first concentration of first type impurities;
a current spreading semiconductor layer formed on a front side of the drift semiconductor layer;
a first source region;
a second source region;
a JFET region formed on a front side of the current spreading semiconductor layer and defined between the first source region and the second source region, the JFET region having a third concentration of first type impurities that is greater than the second concentration of first type impurities;
a plurality of source regions; and
a plurality of base contact regions,
wherein the plurality of source regions and the plurality of base contact regions form alternating strips of N-type doped regions and P-type doped regions, the alternating strips being substantially orthogonal to respective source electrodes formed over the first and the second source regions.