| US 7,498,618 B2 | ||
| Nitride semiconductor device | ||
| Wataru Saito, Kanagawa-ken (Japan); Masaaki Onomura, Tokyo (Japan); Akira Tanaka, Kanagawa-ken (Japan); Koichi Tachibana, Kanagawa-ken (Japan); Masahiko Kuraguchi, Kanagawa-ken (Japan); Takao Noda, Kanagawa-ken (Japan); Tomohiro Nitta, Kanagawa-ken (Japan); and Akira Yoshioka, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Aug. 22, 2006, as Appl. No. 11/507,493. | ||
| Claims priority of application No. 2005-242637 (JP), filed on Aug. 24, 2005. | ||
| Prior Publication US 2007/0051977 A1, Mar. 08, 2007 | ||
| Int. Cl. H01L 29/778 (2006.01) | ||
| U.S. Cl. 257—194 [257/E29.252] | 19 Claims |
| 10. A nitride semiconductor device comprising:
a conductive substrate portion;
a first semiconductor layer provided on the conductive substrate portion, the first semiconductor layer being made of a nitride
semiconductor and having a first region into which a high resistance portion is inserted;
a second semiconductor layer of a nondoped or n-type nitride semiconductor having a larger bandgap than the first semiconductor
layer, the second semiconductor layer being provided on the first semiconductor layer;
a first main electrode provided on the second semiconductor layer above a region outside the first region;
a second main electrode provided on the second semiconductor layer above the first region; and
a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode.
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