| US 7,498,616 B2 | ||
| Compound semiconductor switch circuit device | ||
| Tetsuro Asano, Gunma (Japan); Mikito Sakakibara, Saitama (Japan); Yuichi Kusaka, Gunma (Japan); and Hidetoshi Ishihara, Tokyo (Japan) | ||
| Assigned to Sanyo Electric Co., Ltd., Osaka (Japan) | ||
| Filed on Apr. 27, 2006, as Appl. No. 11/412,113. | ||
| Claims priority of application No. 2005-130763 (JP), filed on Apr. 28, 2005; application No. 2005-341016 (JP), filed on Nov. 25, 2005; application No. 2005-341017 (JP), filed on Nov. 25, 2005; and application No. 2006-060588 (JP), filed on Mar. 07, 2006. | ||
| Prior Publication US 2006/0255403 A1, Nov. 16, 2006 | ||
| Int. Cl. H01L 31/0328 (2006.01) | ||
| U.S. Cl. 257—187 [257/189; 257/E29.242; 257/E27.012] | 14 Claims |
| 1. A field effect transistor comprising:
a compound semiconductor substrate;
a plurality of source electrodes elongated in a first direction;
a plurality of drain electrodes elongated in the first direction, the source electrodes and the drain electrodes being positioned
alternatively with respect to a second direction;
a source wiring electrode formed on the substrate and connecting the source electrodes;
a drain wiring electrode formed on the substrate and connecting the drain electrodes; and
a gate wiring electrode formed on the substrate and comprising a first gate wiring portion disposed parallel to the second
direction and a plurality of second gate wiring portions extending from the first gate wiring portion in the first direction,
wherein each of the second gate wiring portions is disposed between a corresponding source electrode and a corresponding drain
electrode, and said each of the second gate wiring portions bends in the second direction to cover an end portion of the corresponding
source electrode or the corresponding drain electrode.
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