| US 7,498,593 B2 | ||
| Terahertz radiation sources and methods | ||
| Yao-chun Shen, Cambridge (United Kingdom); Edmund H. Linfield, Cambridge (United Kingdom); and Alexander G. Davies, Leeds (United Kingdom) | ||
| Assigned to Cambridge University Technical Services Limited, Cambridge (United Kingdom) | ||
| Appl. No. 10/550,620 PCT Filed Mar. 24, 2004, PCT No. PCT/GB2004/001261 § 371(c)(1), (2), (4) Date May 25, 2006, PCT Pub. No. WO2004/086560, PCT Pub. Date Oct. 07, 2004. |
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| Claims priority of application No. 0307096.8 (GB), filed on Mar. 27, 2003. | ||
| Prior Publication US 2007/0034813 A1, Feb. 15, 2007 | ||
| Int. Cl. A61N 5/06 (2006.01); G01J 3/10 (2006.01); H05G 2/00 (2006.01) | ||
| U.S. Cl. 250—504R [250/330; 250/338.1; 250/338.4; 250/358.1; 250/341.1; 250/341.8; 250/503.1; 250/492.24; 250/493.1; 250/494.4; 250/494.22; 257/E33.04; 372/5] | 23 Claims |
| 1. A terahertz radiation source comprising:
an emitter comprising a semiconductor material having two sides;
a pair of electrodes on one side of said semiconductor;
a pulsed light source input for illuminating said semiconductor to excite photocarriers in said semiconductor to generate
terahertz radiation; and
a radiation collector to collect said terahertz radiation; and
wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes and said light pulsed
source impinges on the same side of said semiconductor as said electrodes.
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