US 7,498,250 B2
Shapes-based migration of aluminum designs to copper damascene
Timothy G. Dunham, South Burlington, Vt. (US); Ezra D. B. Hall, Richmond, Vt. (US); Howard S. Landis, Underhill, Vt. (US); Mark A. Lavin, Katonah, N.Y. (US); and William C. Leipold, Enosburg Falls, Vt. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on Aug. 13, 2007, as Appl. No. 11/837,768.
Application 11/837768 is a division of application No. 11/256025, filed on Oct. 21, 2005, granted, now 7,312,141.
Application 10/305644 is a division of application No. 09/670411, filed on Sep. 26, 2000, granted, now 6,528,883.
Application 11/256025 is a continuation in part of application No. 10/305644, filed on Nov. 26, 2002, granted, now 6,992,002.
Prior Publication US 2007/0275551 A1, Nov. 29, 2007
Int. Cl. H01L 21/44 (2006.01)
U.S. Cl. 438—597  [257/E21.575] 13 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit, comprising:
providing a dielectric layer having a bottom surface disposed over a semiconductor substrate;
simultaneously forming a first trench and a multiplicity of second trenches in said dielectric layer, said first trench including dielectric pedestals within said first trench, said dielectric pedestals comprised of said dielectric layer; and
simultaneously completely filling said first trench and said multiplicity of second trenches with a layer of metal to form respectively a wire having dielectric pedestals therein and a set of metal fill shapes, said metal fill shapes extending from a top surface of said dielectric layer toward said bottom surface of said dielectric layer, said metal fill shapes arranged in a first pattern,
said dielectric pedestals extending from a top surface of said wire to a bottom surface of said wire, sides of said dielectric pedestals completely surrounded by said wire, said dielectric pedestals arranged in a second pattern, wherein said second pattern is an offset-grid, said offset grid having a pitch defined by a width of said wire.