| US 7,498,235 B2 | ||
| Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates | ||
| Tze-chiang Chen, Yorktown Heights, N.Y. (US); Guy M. Cohen, Mohegan Lake, N.Y. (US); Alexander Reznicek, Mount Kisco, N.Y. (US); Devendra K. Sadana, Pleasantville, N.Y. (US); and Ghavam G. Shahidi, Pound Ridge, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Oct. 25, 2007, as Appl. No. 11/924,207. | ||
| Application 11/924207 is a division of application No. 11/481525, filed on Jul. 06, 2006, granted, now 7,315,065. | ||
| Application 11/481525 is a division of application No. 10/700085, filed on Nov. 03, 2003, granted, now 7,084,460, filed on Aug. 01, 2006. | ||
| Prior Publication US 2008/0050887 A1, Feb. 28, 2008 | ||
| Int. Cl. H01L 21/30 (2006.01) | ||
| U.S. Cl. 438—455 [438/118; 438/406; 257/19; 257/E21.088] | 10 Claims |
| 1. A method for forming a germanium-on-insulator comprising:
roughing a surface of a Ge-containing donor substrate, said roughing comprises sputtering in an inert gas;
forming an intermediate adhesion layer on the roughened surface of the Ge-containing donor substrate;
forming a buried insulator layer on said intermediate adhesion layer;
implanting hydrogen into said Ge-containing donor substrate; and
bonding an exposed surface of the buried insulator layer to a semiconducting or non-semiconducting substrate, wherein during
said bonding a portion of the Ge-containing donor substrate is transferred to said substrate.
|