| US 7,498,225 B1 | ||
| Systems and methods for forming multiple fin structures using metal-induced-crystallization | ||
| Haihong Wang, Milpitas, Calif. (US); Shibly S. Ahmed, San Jose, Calif. (US); Ming-Ren Lin, Cupertino, Calif. (US); and Bin Yu, Cupertino, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US) | ||
| Filed on Jul. 05, 2006, as Appl. No. 11/428,722. | ||
| Application 11/428722 is a division of application No. 10/726569, filed on Dec. 04, 2003, abandoned. | ||
| Int. Cl. H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—283 [438/588; 257/E21.454; 257/E21.345] | 20 Claims |
| 1. A method of forming fin structures for a semiconductor device that includes a substrate and a dielectric layer formed on
the substrate, the method comprising:
etching the dielectric layer to form a first structure;
depositing an amorphous silicon layer over the first structure;
etching the amorphous silicon layer to form second and third fin structures adjacent first and second side surfaces of the
first structure, the second and third fin structures including amorphous silicon material;
depositing, using a mask, a metal layer on upper surfaces of the second and third fin structures and not on the first structure;
performing a metal-induced crystallization operation to convert the amorphous silicon material of the second and third fin
structures to a crystalline silicon material; and
removing the first structure.
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