| US 7,498,222 B1 | ||
| Enhanced etching of a high dielectric constant layer | ||
| John C. Foster, Mountain View, Calif. (US); Scott Bell, San Jose, Calif. (US); Allison Holbrook, San Jose, Calif. (US); Simon S. Chan, Saratoga, Calif. (US); and Phillip Jones, Fremont, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US); and Spansion LLC, Sunnyvale, Calif. (US) | ||
| Filed on Mar. 09, 2006, as Appl. No. 11/371,024. | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—261 [438/287; 438/288; 438/705; 438/745; 257/E21.246; 257/E21.625; 257/E21.681] | 15 Claims |
| 8. A method of patterning a first dielectric layer comprising:
forming the first dielectric layer over a second dielectric layer;
patterning a mask to cover portions of the first dielectric layer;
implanting ions into the first dielectric layer at a dosage of about 5×1014 atoms/cm2 to about 1×1016 atoms/cm2 and an implantation energy ranging from about 5 keV to about 100 keV, the ions damaging portions of the first dielectric layer
not covered by the mask; and
simultaneously etching the mask and the damaged portions of the first dielectric layer.
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