| US 7,498,204 B2 | ||
| Structure and method for improved heat conduction for semiconductor devices | ||
| Daniel Charles Kerr, Orlando, Fla. (US); Alan Sangone Chen, Windermere, Fla. (US); Edward Paul Martin, Jr., Orlando, Fla. (US); Amal Ma Hamad, Frisco, Tex. (US); and William A. Russell, Orlando, Fla. (US) | ||
| Assigned to Agere Systems Inc., Allentown, Pa. (US) | ||
| Filed on Jan. 03, 2008, as Appl. No. 11/968,693. | ||
| Application 11/968693 is a division of application No. 10/955238, filed on Sep. 30, 2004, granted, now 7,345,364. | ||
| Prior Publication US 2008/0102584 A1, May 01, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—122 [257/E21.51] | 15 Claims |
| 1. A method for forming a semiconductor integrated circuit, comprising:
forming doped regions in a semiconductor substrate;
forming material layers overlying the substrate;
forming a device in one or more of the material layers;
forming first openings in the material layers, wherein the first openings extend to the substrate and are disposed proximate
the device; and
forming thermally conductive material in the first openings.
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