| US 7,496,885 B1 | ||
| Method of compensating for defective pattern generation data in a variable shaped electron beam system | ||
| Brian Neal Caldwell, Milton, Vt. (US); Daniel Boyd Sullivan, Edina, Minn. (US); and Raymond Walter Jeffer, South Burlington, Vt. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Apr. 02, 2008, as Appl. No. 12/61,439. | ||
| Int. Cl. G06F 17/50 (2006.01) | ||
| U.S. Cl. 716—21 [716/5; 716/19] | 1 Claim |

| 1. A method for correcting mask pattern generation data resulting in one or more defects in mask shapes printed from an original
mask pattern generation data set wherein said original mask pattern generation data set comprising multiple complex segmented
and merged data, said original mask pattern generation data set further including shot data responsible for the one or more
defects, when shot on an exposure tool, said method comprising:
storing, from the original mask data set, shot identification information of each individual exposure shot, wherein said shot
identification information further comprising information selected from a group consisting of shot location information, shot
sequencing identification, shot dosage information, and shot size information;
identifying and storing defect shot identification information for the one or more defects, wherein said defect shot identification
information further comprising information selected from a group consisting of shot location information, shot sequencing
identification, shot dosage information, and shot size information;
generating error correction data from the stored shot identification information and the stored defect shot identification
information;
merging the error correction data with the original mask pattern generation data set; and
controlling a set of one or more exposure shots, on the exposure tool, for each location of the one or more defects, using
the merged error correction data with the original mask pattern generation data set to print subsequent masks, such that the
one or more defects from masks printed from the original mask pattern generation data set are eliminated from the subsequent
masks.
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