US 7,496,709 B2
Integrated circuit memory device having delayed write timing based on read response time
Richard M. Barth, Palo Alto, Calif. (US); Frederick A. Ware, Los Altos Hills, Calif. (US); Donald C. Stark, Los Altos, Calif. (US); Craig E. Hampel, San Jose, Calif. (US); Paul G. Davis, San Jose, Calif. (US); Abhijit M. Abhyankar, Sunnyvale, Calif. (US); James A. Gasbarro, Mountain View, Calif. (US); and David Nguyen, San Jose, Calif. (US)
Assigned to Rambus Inc., Los Altos, Calif. (US)
Filed on Dec. 10, 2007, as Appl. No. 11/953,803.
Application 10/128167 is a division of application No. 09/169206, filed on Oct. 09, 1998, granted, now 6,401,167.
Application 11/953803 is a continuation of application No. 11/692159, filed on Mar. 27, 2007, granted, now 7,330,952.
Application 11/692159 is a continuation of application No. 11/059216, filed on Feb. 15, 2005, granted, now 7,197,611.
Application 11/059216 is a continuation of application No. 10/128167, filed on Apr. 22, 2002, granted, now 6,868,474.
Claims priority of provisional application 60/061770, filed on Oct. 10, 1997.
Prior Publication US 2008/0091907 A1, Apr. 17, 2008
Int. Cl. G06F 12/00 (2006.01)
U.S. Cl. 711—105  [711/167] 50 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a memory core to store data;
a first set of interconnect resources to receive write data; and
a second set of interconnect resources to receive:
a write command associated with the write data; and
information indicating whether mask information is included with the write command, wherein the mask information specifies whether to selectively write portions of the write data to the memory core.