| US 7,495,456 B2 | ||
| System and method of determining pulse properties of semiconductor device | ||
| Hideki Horii, Seoul (Korea, Republic of); and Yong-Ho Ha, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Feb. 24, 2006, as Appl. No. 11/361,412. | ||
| Claims priority of application No. 10-2005-0043812 (KR), filed on May 24, 2005. | ||
| Prior Publication US 2006/0267573 A1, Nov. 30, 2006 | ||
| Int. Cl. G01R 27/08 (2006.01) | ||
| U.S. Cl. 324—713 [324/769; 702/65; 257/200; 714/8] | 27 Claims |
| 1. A system of determining pulse properties of a resistance random-access memory (RRAM) device, the system comprising:
a first probe and a second probe electrically contacting terminals of the RRAM device;
a pulse generator supplying a pulse electric signal to the first probe; and
an oscilloscope having a first channel and a second channel, wherein the pulse electric signal is supplied to the first channel
and the first probe, and the second channel is connected to the second probe,
wherein the oscilloscope calculates a pulse current flowing through the terminals of the RRAM device using the second channel
and determines a dynamic resistance of the RRAM device using the first and second channels.
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