| US 7,495,256 B2 | ||
| Semiconductor apparatus and fabrication method of the same | ||
| Shunpei Yamazaki, Tokyo (Japan); Toru Takayama, Kanagawa (Japan); Junya Maruyama, Kanagawa (Japan); and Yumiko Ohno, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Aug. 18, 2005, as Appl. No. 11/206,000. | ||
| Application 11/206000 is a division of application No. 10/685398, filed on Oct. 16, 2003, granted, now 7,067,392. | ||
| Claims priority of application No. 2002-305084 (JP), filed on Oct. 18, 2002. | ||
| Prior Publication US 2006/0186399 A1, Aug. 24, 2006 | ||
| Int. Cl. H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01) | ||
| U.S. Cl. 257—57 [257/59; 257/66; 257/72] | 21 Claims |
| 1. A semiconductor apparatus comprising:
a plastic substrate or a plastic base material each of which has thermal conductivity of from 2 to 30 W/mK as a support medium;
an adhesive in contact with the plastic substrate or the plastic base material;
an insulating film in contact with the adhesive; and
a device over the insulating film,
wherein the plastic substrate or the plastic base material comprises a resin and a metal fiber provided in the resin.
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