| US 7,495,230 B2 | ||
| Using a polaron interaction zone as an interface to integrate a plasmon layer and a semiconductor detector | ||
| David T. Wei, Malibu, Calif. (US); and Axel Scherer, Laguna Beach, Calif. (US) | ||
| Assigned to California Institute of Technology, Pasadena, Calif. (US) | ||
| Filed on Aug. 16, 2005, as Appl. No. 11/205,781. | ||
| Claims priority of provisional application 60/602117, filed on Aug. 17, 2004. | ||
| Claims priority of provisional application 60/602061, filed on Aug. 17, 2004. | ||
| Prior Publication US 2006/0170926 A1, Aug. 03, 2006 | ||
| Int. Cl. G01K 1/08 (2006.01) | ||
| U.S. Cl. 250—397 [250/492.2; 356/445] | 7 Claims |
| 1. A plasmon detector, comprising:
a top layer of material adapted to generate a plasmon when excited by an incident beam of light;
an interface layer joined to the top layer opposite from the surface of the top layer and adapted to slow polarons emitted
by the plasmon to thermal electrons; and
a collector layer joined to the interface layer opposite from the top layer and adapted to collect the thermal electrons from
the interface layer.
|