| US 7,494,931 B2 | ||
| Method for fabricating semiconductor device and polishing method | ||
| Dai Fukushima, Kanagawa (Japan); Gaku Minamihaba, Kanagawa (Japan); Hiroyuki Yano, Kanagawa (Japan); Nobuyuki Kurashima, Kanagawa (Japan); and Susumu Yamamoto, Oita (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 26, 2006, as Appl. No. 11/526,671. | ||
| Claims priority of application No. 2005-283227 (JP), filed on Sep. 29, 2005. | ||
| Prior Publication US 2007/0072427 A1, Mar. 29, 2007 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—692 [451/287] | 16 Claims |
| 1. A method for fabricating a semiconductor device comprising:
forming a copper film above a surface of a substrate;
forming on a polishing pad a water-insoluble copper complex, wherein the copper of said copper complex does not derive from
said copper film; and
after having formed said water-insoluble copper complex on said polishing pad, polishing said copper film by use of said polishing
pad,
wherein when forming said copper complex, a dummy substrate different from said substrate is polished by said polishing pad
while supplying a copper solution and a prespecified chemical liquid onto said polishing pad.
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