| US 7,494,921 B2 | ||
| Aluminum metal line of a semiconductor device and method of fabricating the same | ||
| Jae Won Han, Suwon-si (Korea, Republic of) | ||
| Assigned to Dongbu Electronics Co., Ltd., Seoul (Korea, Republic of) | ||
| Filed on Dec. 28, 2006, as Appl. No. 11/646,442. | ||
| Claims priority of application No. 10-2005-0133338 (KR), filed on Dec. 29, 2005. | ||
| Prior Publication US 2007/0166988 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—633 [438/643; 438/645; 438/694] | 8 Claims |
| 1. A method of forming an aluminum line of a semiconductor device, the method comprising:
sequentially applying a first A metal thin layer, a first aluminum layer, and a first B metal thin layer on an interlayer
insulating layer including one of a contact and a via;
applying photoresist and selectively etching the first A metal thin layer, the first aluminum layer, and the first B metal
thin layer to form a first metal line pattern;
applying a first intermetallic dielectric layer on the first metal line pattern;
removing the first B metal thin layer by a chemical mechanical planarization process to form a first stage metal line;
sequentially applying a second aluminum layer and second metal thin layer;
applying photoresist and selectively etching the second aluminum layer and the second metal thin layer to form a second metal
line pattern which is the same as the first metal line pattern;
applying a second intermetallic dielectric layer on the second metal line pattern; and
performing a chemical mechanical planarization process on the second intermetallic dielectric layer to form a second stage
metal line.
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